📚 Journal Paper Electronic ISSN

Voltage Partition–Driven Modulation of Quantum Capacitance and Ideality Factor in Graphene/Si Schottky Junctions

BA Banafsheh Alizadeh Arashloo

📅 March 22, 2026 📖 Vol. 65 📋 Issue 4

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📝 Cite This Paper

Banafsheh Alizadeh Arashloo (2026). Voltage Partition–Driven Modulation of Quantum Capacitance and Ideality Factor in Graphene/Si Schottky Junctions. Electronic ISSN, 65(4). https://doi.org/10.1007/s10773-026-06311-7

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